Description
- Type: NPN Bipolar Junction Transistor (BJT)
- Maximum Collector Current (Ic): 800 mA
- Maximum Collector-Emitter Voltage (Vce): 45V
- Collector-Base Voltage (Vcb): 50V
- Emitter-Base Voltage (Veb): 5V
- DC Current Gain (hFE): 100 to 630 (varies by A/B/C variant)
- Power Dissipation: 625 mW
- Transition Frequency (fT): 100 MHz
- Package: TO-92 (Through-Hole)
- Applications: Signal amplification, switching, relay drivers, audio preamps
- Complementary PNP: BC327 Transistor
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