Description
- Type: PNP Bipolar Junction Transistor (BJT)
- Maximum Collector Current (Ic): -150 mA
- Maximum Collector-Emitter Voltage (Vce): -50V
- Collector-Base Voltage (Vcb): -50V
- Emitter-Base Voltage (Veb): -5V
- DC Current Gain (hFE): 70–400 (depending on variant GR/Y/BL)
- Power Dissipation: 400 mW
- Transition Frequency (fT): 80 MHz
- Package Type: TO-92 (Through-Hole)
- Applications: Audio preamplifiers, low-power switching, signal amplification
- Complementary NPN: C1815 Transistor







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