Description
- Type: PNP Bipolar Junction Transistor (BJT)
- Maximum Collector Current (Ic): 800 mA
- Maximum Collector-Emitter Voltage (Vce): -45V
- Collector-Base Voltage (Vcb): -50V
- Emitter-Base Voltage (Veb): -5V
- DC Current Gain (hFE): 100 to 630 (depending on A/B/C variant)
- Power Dissipation: 625 mW
- Transition Frequency (fT): 100 MHz
- Package Type: TO-92 (Through-Hole)
- Applications: Signal amplification, low-side switching, push-pull amplifier circuits
- Complementary NPN: BC337 Transistor







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