Description
- Type: NPN Bipolar Junction Transistor (BJT)
- Maximum Collector Current (Ic): 800 mA
- Maximum Collector-Emitter Voltage (Vce): 40V
- Collector-Base Voltage (Vcb): 75V
- Emitter-Base Voltage (Veb): 6V
- DC Current Gain (hFE): 100–300 (typical)
- Power Dissipation: 500 mW (TO-18 metal can) / 625 mW (TO-92 plastic)
- Transition Frequency (fT): 250 MHz (high-speed switching)
- Package Types: TO-18 (metal can), TO-92 (plastic)
- Applications: Relay driving, logic switching, signal amplification, Arduino & robotics
- Complementary PNP: 2N2907







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