Description
- Type: NPN Bipolar Junction Transistor (BJT)
- Maximum Collector Current (Ic): 200 mA
- Maximum Collector-Emitter Voltage (Vce): 40V
- Collector-Base Voltage (Vcb): 60V
- Emitter-Base Voltage (Veb): 6V
- DC Current Gain (hFE): 100–300
- Power Dissipation: 625 mW
- Transition Frequency (fT): 250 MHz
- Package Type: TO-92 (Through-Hole)
- Applications: Signal amplification, logic switching, driver circuits, LED control
- Complementary PNP: 2N3906







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