Description
- Type: NPN Bipolar Junction Transistor (BJT)
- Maximum Collector Current (Ic): 700 mA
- Maximum Collector-Emitter Voltage (Vce): 25V
- Collector-Base Voltage (Vcb): 40V
- Emitter-Base Voltage (Veb): 5V
- DC Current Gain (hFE): 100 to 300 (typical)
- Power Dissipation: 625 mW (max)
- Transition Frequency (fT): 100 MHz (typical)
- Package Type: TO-92 (Through-Hole)
- Applications: LED drivers, small relay control, audio preamps, logic-level switching
- Complementary PNP: S8550 Transistor
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