Description
- Type: NPN Bipolar Junction Transistor (BJT)
- Maximum Collector Current (Ic): 150 mA
- Maximum Collector-Emitter Voltage (Vce): 50V
- Collector-Base Voltage (Vcb): 60V
- Emitter-Base Voltage (Veb): 5V
- DC Current Gain (hFE): 70–700 (varies by GR/Y/BL grade)
- Power Dissipation: 400 mW
- Transition Frequency (fT): 80 MHz
- Package Type: TO-92 (Through-Hole)
- Applications: Audio preamps, signal amplification, low-power switching, noise-sensitive circuits
- Complementary PNP: A1015 Transistor







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