Description
- Type: PNP Bipolar Junction Transistor (BJT)
- Maximum Collector Current (Ic): -700 mA
- Maximum Collector-Emitter Voltage (Vce): -25V
- Collector-Base Voltage (Vcb): -40V
- Emitter-Base Voltage (Veb): -5V
- DC Current Gain (hFE): 100–300
- Power Dissipation: 625 mW
- Transition Frequency (fT): 100 MHz
- Package Type: TO-92 (Through-Hole)
- Applications: LED drivers, signal amplification, low-voltage switching
- Complementary NPN: S8050 Transistor







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