Description
- Type: PNP Bipolar Junction Transistor (BJT)
- Maximum Collector Current (Ic): 600 mA
- Maximum Collector-Emitter Voltage (Vce): -40V
- Collector-Base Voltage (Vcb): -60V
- Emitter-Base Voltage (Veb): -5V
- DC Current Gain (hFE): 100–300
- Power Dissipation: 400 mW to 625 mW (depending on package)
- Transition Frequency (fT): ~200 MHz
- Package Types: TO-18 (metal can), TO-92 (plastic)
- Applications: Low-power switching, logic circuits, audio amps, control circuits
- Complementary NPN: 2N2222
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