Description
- Type: NPN Bipolar Junction Transistor (BJT)
- Maximum Collector Current (Ic): 100 mA
- Maximum Collector-Emitter Voltage (Vce): 45V
- Collector-Base Voltage (Vcb): 50V
- Emitter-Base Voltage (Veb): 6V
- DC Current Gain (hFE): 110 to 800 (depending on variant A/B/C)
- Power Dissipation: 500 mW (max)
- Package Type: TO-92 (Through-Hole)
- Transition Frequency: ~150 MHz
- Applications: Signal amplification, LED drivers, relay control, switching circuits
- Complementary Pair: BC557 (PNP)
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